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Ceria slurry CMP Chemical Mechanical Polishing CeO2 slurry

Categories Cerium Oxide Polishing Powder
Brand Name: CBC
Place of Origin: CHINA
MOQ: Negotiable
Price: Negotiable
Payment Terms: T/T, L/C, D/P
Supply Ability: 10,000KGS
Delivery Time: 10 work days
Packaging Details: Carton inner with 5X4kg plastic bottles. Net weight 20kg
Materail: Dielectric Slurry
Properties: White slurry
Chemical: Cerium Oxide
Storage: Keep sealed and store in dry and cool places
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Ceria slurry CMP Chemical Mechanical Polishing CeO2 slurry

Ceria Slurry CMP Chemical Mechanical Polishing CeO2 slurry


Synonyms: Ceria Slurry; CMP; Chemical Mechanical Polishing; CeO2 slurry; Cerium Oxide Slurry; White Cerium Oxide Polishing Slurry; Polishing Slurry; CeO2


Applications:


Abrasive 100nm or less Ceria Slurry
Applicable to the memory, LSI STI and ILD processes
To select the ratio of the nitride film and the poly silicon film, it should be mixed with a specific additive.
Customized for each customer product

The slurry with fine size particles, optimized for defects and scratches


Abrasive 100nm Ceria Slurry
Applicable to SII and ILD processes
For the selection ratio to the nitride film, it is supplied as mixed with the additive and customized for earch customer product
with its tiny slurry particle size, it enhances the product quality if used on the defect and scratch sensitive products.


Abrasive 150nm Ceria Slurry
Applicable to the memory, LSI STI processes
It is used as mixed with the additive to have the selection ratio to the nitride film.
If used in the process required of CMP profile control, it enhances the CMP characteristics.


Abrasive 300nm Ceria Slurry
Applicable to the memory ILD process, STI processes of the LSI with 50nm design rule or greater.
It is used as mixed with the additive to have the selection ratio to the nitride film.
With the high removal amount, it is good to the high step removal process.


Colloidal Ceria Slurry
Particles are produced in the bottom up type and it has low deviation in the appearance and particle size distribution, which is
good for scratches.
Since its polishing speed is faster than that of the solid phase method, it is used in the high step removal proscess.
To select the ratio of the nitride film and the poly silicon film, it is used as mixed with the additive.


Product features:


the ceria slurry used in the CMP process is the suspension that the ultrapure water and additives are mixed with rare earth element ceria particles in the size of 100-500mm. It is a high abrasive product that removes the film to be polished chmically and mechanically in the nanometer scale.


The added additive selectively polishes the film to realize high flatness after CMP.


CMP refers to Chemical Mechanical Polishing, it is the semiconductor proscess that uses the chemical reaction and the mechanical force to evenly polishing the wafer surface.


150nm Slurry Specification:

Characteristicunitvaluelower limitupper limit
CeO2wt%30.0%29.031.0
pH5.24.75.7
ConductivitymS/cm0.06-0.13
SSAm2/g13.012.015.0
SSA sizenm645569
Average Particle sizenm143120160

The standard specifications are for reference only and can be supplied regularly, Some special specifications can be customized according to customer requirements.

Quality Ceria slurry CMP Chemical Mechanical Polishing CeO2 slurry for sale
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